An improved electron and hole mobility model for general purpose device simulation

A new, comprehensive, physically-based, semiempirical, local model for transverse-field dependent electron and hole mobility in MOS transistors is presented. In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of subs...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 44; no. 9; pp. 1529 - 1538
Main Authors Darwish, M.N., Lentz, J.L., Pinto, M.R., Zeitzoff, P.M., Krutsick, T.J., Hong Ha Vuong
Format Journal Article
LanguageEnglish
Published IEEE 01.09.1997
Subjects
Charge carrier processes
Charge measurement
Current measurement
Density measurement
Doping
Electric variables measurement
Electron mobility
Length measurement
MOSFETs
Semiconductor process modeling
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Summary:A new, comprehensive, physically-based, semiempirical, local model for transverse-field dependent electron and hole mobility in MOS transistors is presented. In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias, we account for the dependence of surface roughness limited mobility on the inversion charge density, in addition to including the effect of coulomb screening of impurities by charge carriers in the bulk mobility term. The result is a single mobility model applicable throughout a generalized device structure that gives good agreement with measured mobility data and measured MOS I-V characteristics over a wide range of substrate doping, channel length, transverse electric field, substrate bias, and temperature.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.622611