Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport

• Published in: Solid-state electronics Vol. 41; no. 8; pp. 1139 - 1152
• Main Authors: Köpf, Ch, Kosina, H, Selberherr, S
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.1997
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/S0038-1101(97)00051-8

We describe models for physical properties of the technologically significant GaInAs material system with respect to its composition and strain conditions introduced by strained-layer heteroepitaxy. We give an empirical relation for the critical thickness which takes growth conditions into account and allows the residual strain for layer thicknesses exceeding the critical one to be estimated. Easy to use models for the band edge energy and effective mass are presented, which are based on deformation potential and k·p theory. Monte Carlo calculations were employed to obtain a model for the anisotropic electron mobility. All models are given as functions of the independent parameters composition and strain which are no longer strictly coupled in the relaxed case.