Optical and structural characterization of copper indium disulfide thin films

Thin films of copper indium disulfide (CuInS 2) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2% of stoichiometrically correct CuInS 2. The th...

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Published inMaterials in engineering Vol. 22; no. 7; pp. 585 - 589
Main Authors Henderson, D.O., Mu, R., Ueda, A., Wu, M.H., Gordon, E.M., Tung, Y.S., Huang, M., Keay, J., Feldman, L.C., Hollingsworth, J.A., Buhro, W.E., Harris, J.D., Hepp, A.F., Raffaelle, R.P.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.10.2001
Subjects
Optical
Semi-conductors
Vapour deposition
Vapour deposition
Optical
Semi-conductors
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Summary:Thin films of copper indium disulfide (CuInS 2) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2% of stoichiometrically correct CuInS 2. The thickness of the films was found to be approximately 1.0 μm. An optical band-gap of approximately 1.44 eV for this material was determined by optical transmission spectroscopy. Reflectance spectroscopy identified phonon bands centered at 225, 291 and 317 cm −1.
ISSN:0261-3069
DOI:10.1016/S0261-3069(01)00019-X