Dislocation and kink motion study in the bulk SiGe alloy single crystals

The individual dislocation mobility in bulk single SiGe crystals has been studied both with conventional and intermittent loading (IL) techniques. A model is used connecting the experimental data on dislocation paths with values of kink displacements under IL. The experimental data are compared with...

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Bibliographic Details
Published inMaterials science & engineering. A, Structural materials : properties, microstructure and processing Vol. 234; pp. 735 - 738
Main Authors Abrosimov, N.V., Alex, V., Dyachenko-Dekov, D.V., Iunin, Yu.L., Nikitenko, V.I., Orlov, V.I., Rossolenko, S.N., Schröder, W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.08.1997
Subjects
Dislocation
Dislocation kink
Point defects
SiGe alloys
Point defects
Dislocation kink
SiGe alloys
Dislocation
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Summary:The individual dislocation mobility in bulk single SiGe crystals has been studied both with conventional and intermittent loading (IL) techniques. A model is used connecting the experimental data on dislocation paths with values of kink displacements under IL. The experimental data are compared with two models describing the interaction of a dislocation with point defects. It is shown that with small Ge concentration Cottrell atmosphere determines the dynamical drag of the dislocation giving rise to threshold immobilisation. With higher Ge content the specific mode of kink drift along the dislocation line (the motion in the field of random forces) takes place.
ISSN:0921-5093
1873-4936
DOI:10.1016/S0921-5093(97)00270-0