Low-temperature photon-drag effect in magnetic semiconductors

• Published in: Physics letters. A Vol. 266; no. 4-6; pp. 421 - 424
• Main Authors: Nunes, O.A.C, Agrello, D.A, Fonseca, A.L.A
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 28.02.2000
• Subjects: Electron–photon interaction; Photon-drag effect; Photovoltage effect; Spin-flip transitions; 72.40.+w; 72.10.Di; Photovoltage effect; Spin-flip transitions; 71.36.+c; Electron–photon interaction; Photon-drag effect; 71.70.Gm

The low-temperature photon drag (LTPD) effect due to direct spin-flip intraband photon absorption by conduction electrons during transitions between spin sub-bands in degenerate magnetic semiconductors such as EuO is calculated. It is shown that the LTPD current consists essentially of a sharp peak...