Low-temperature photon-drag effect in magnetic semiconductors

The low-temperature photon drag (LTPD) effect due to direct spin-flip intraband photon absorption by conduction electrons during transitions between spin sub-bands in degenerate magnetic semiconductors such as EuO is calculated. It is shown that the LTPD current consists essentially of a sharp peak...

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Bibliographic Details
Published inPhysics letters. A Vol. 266; no. 4-6; pp. 421 - 424
Main Authors Nunes, O.A.C, Agrello, D.A, Fonseca, A.L.A
Format Journal Article
LanguageEnglish
Published Elsevier B.V 28.02.2000
Subjects
Electron–photon interaction
Photon-drag effect
Photovoltage effect
Spin-flip transitions
72.40.+w
72.10.Di
Photovoltage effect
Spin-flip transitions
71.36.+c
Electron–photon interaction
Photon-drag effect
71.70.Gm
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Summary:The low-temperature photon drag (LTPD) effect due to direct spin-flip intraband photon absorption by conduction electrons during transitions between spin sub-bands in degenerate magnetic semiconductors such as EuO is calculated. It is shown that the LTPD current consists essentially of a sharp peak at the band splitting frequency which shifts towards low frequencies as the temperature increases from T=0 K.
ISSN:0375-9601
1873-2429
DOI:10.1016/S0375-9601(00)00055-4