Low-temperature photon-drag effect in magnetic semiconductors

The low-temperature photon drag (LTPD) effect due to direct spin-flip intraband photon absorption by conduction electrons during transitions between spin sub-bands in degenerate magnetic semiconductors such as EuO is calculated. It is shown that the LTPD current consists essentially of a sharp peak...

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Published inPhysics letters. A Vol. 266; no. 4-6; pp. 421 - 424
Main Authors Nunes, O.A.C, Agrello, D.A, Fonseca, A.L.A
Format Journal Article
LanguageEnglish
Published Elsevier B.V 28.02.2000
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Abstract The low-temperature photon drag (LTPD) effect due to direct spin-flip intraband photon absorption by conduction electrons during transitions between spin sub-bands in degenerate magnetic semiconductors such as EuO is calculated. It is shown that the LTPD current consists essentially of a sharp peak at the band splitting frequency which shifts towards low frequencies as the temperature increases from T=0 K.
AbstractList The low-temperature photon drag (LTPD) effect due to direct spin-flip intraband photon absorption by conduction electrons during transitions between spin sub-bands in degenerate magnetic semiconductors such as EuO is calculated. It is shown that the LTPD current consists essentially of a sharp peak at the band splitting frequency which shifts towards low frequencies as the temperature increases from T=0 K.
Author Agrello, D.A
Fonseca, A.L.A
Nunes, O.A.C
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10.1103/PhysRevLett.58.2263
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10.1103/PhysRevB.38.87
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Photovoltage effect
Spin-flip transitions
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Electron–photon interaction
Photon-drag effect
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Snippet The low-temperature photon drag (LTPD) effect due to direct spin-flip intraband photon absorption by conduction electrons during transitions between spin...
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SubjectTerms Electron–photon interaction
Photon-drag effect
Photovoltage effect
Spin-flip transitions
Title Low-temperature photon-drag effect in magnetic semiconductors
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