Ion plasma sputtering of multi-component materials
A new model for the sputtering of multi-component materials is proposed, which allowed us to calculate the rate of selective sputtering of multi-component target and the transient time of selective sputtering. The model is based on the introduction of the new parameter : the threshold energy of sele...
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Published in | Vacuum Vol. 51; no. 2; pp. 227 - 230 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.10.1998
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Online Access | Get full text |
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Summary: | A new model for the sputtering of multi-component materials is proposed, which allowed us to calculate the rate of selective sputtering of multi-component target and the transient time of selective sputtering. The model is based on the introduction of the new parameter : the threshold energy of selective sputtering. The model proposed and the analysis of experimental data on the ion etching rate of high temperature superconductors allowed us to evaluate the transient time of selective sputtering and sputtering rate for the case of YBCO target. |
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ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/S0042-207X(98)00164-X |