Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon

This paper contains a description of a procedure for determining the rates of photon generation by hot electrons in silicon. The algorithm proposed presumes the mathematical processing of experimental radiation spectra of forward-biased MOS tunnel structures on p-Si. These structures allow a quasimo...

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Bibliographic Details
Published inMaterials science in semiconductor processing Vol. 3; no. 5; pp. 539 - 543
Main Authors Asli, N., Gastev, S.V., Grekhov, I.V., Seegebrecht, P., Shulekin, A.F., Tyaginov, S.E., Vexler, M.I., Zimmermann, H.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.10.2000
Subjects
Electroluminescence spectra
Hot electron
MOS tunnel structure
Photon emission rate
Silicon
Hot electron
Silicon
MOS tunnel structure
Photon emission rate
Electroluminescence spectra
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Summary:This paper contains a description of a procedure for determining the rates of photon generation by hot electrons in silicon. The algorithm proposed presumes the mathematical processing of experimental radiation spectra of forward-biased MOS tunnel structures on p-Si. These structures allow a quasimonoenergetic injection of electrons and are capable of emitting light. The electron energy may be varied within the range of several eV, depending on the insulator thickness used. Some practical problems, such as the elimination of a “thermal” component from the spectra and the corrections for a re-absorption of emitted photons, are given attention to. The approbation of a proposed algorithm will remain, however, beyond the scope of this work.
ISSN:1369-8001
1873-4081
DOI:10.1016/S1369-8001(00)00081-0