PIXE analysis with the XR-100CR Si-PIN detector

The use of XR-100CR Si-PIN detector for PIXE measurements is examined. The relative efficiency was calculated using the Cu- and GaAs-PIXE spectra produced by target bombardment with 1.8 MeV He + followed by a nonlinear fit procedure of the experimental spectra to a detector model. The main feature o...

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Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 155; no. 1; pp. 137 - 142
Main Authors Al-Turany, M., Meyer, J.D., Bethge, K.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.07.1999
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Summary:The use of XR-100CR Si-PIN detector for PIXE measurements is examined. The relative efficiency was calculated using the Cu- and GaAs-PIXE spectra produced by target bombardment with 1.8 MeV He + followed by a nonlinear fit procedure of the experimental spectra to a detector model. The main feature of this detector model is the presence of a relatively thick Si dead layer in front of the detector.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(99)00399-7