Anomalous temperature dependence of series resistance in Ag\Si and Al\Si Schottky junctions

Recently high temperature dependence of series resistance was obtained in Ag\n-Si and Al\n-Si\p-Si Schottky junctions prepared by ionised cluster beam deposition and by plasma immersion implantation, respectively. In this work it is shown by experiments that this feature was due to the poor quality...

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Published inVacuum Vol. 50; no. 3-4; pp. 417 - 419
Main Authors Horváth, Zs J, Ádám, M, Pintér, I, Cvikl, B, Korošak, D, Mrdjen, T, Tuyen, Vo Van, Makaró, Zs, Dücsö, Cs, Bársony, I
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.07.1998
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Summary:Recently high temperature dependence of series resistance was obtained in Ag\n-Si and Al\n-Si\p-Si Schottky junctions prepared by ionised cluster beam deposition and by plasma immersion implantation, respectively. In this work it is shown by experiments that this feature was due to the poor quality of backside ohmic contacts.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(98)00076-1