Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs

Defects in silica related to hydrogen and oxygen vacancies have been analyzed using first principles density functional calculations. The hydrogen bridge has been identified as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown. The question of Joule...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 273-274; pp. 1022 - 1026
Main Authors Blöchl, Peter E, Stathis, James H
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.1999
Subjects
Dielectric breakdown
Silicon dioxide
Tunneling
Tunneling
Silicon dioxide
Dielectric breakdown
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Summary:Defects in silica related to hydrogen and oxygen vacancies have been analyzed using first principles density functional calculations. The hydrogen bridge has been identified as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown. The question of Joule heating of the oxide as a result of dielectric breakdown is discussed. A classification scheme for defects in the short-range structure of silica is presented.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00628-6