Simulation of recombination contrast of extended defects in the modulated EBIC

The computer simulation of electron beam-induced current (EBIC) profiles and of EBIC contrast dependence on depletion region width have been carried out. It has been shown that both EBIC profiles and contrast dependence on depletion region width can be used for defect region parameters reconstructio...

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Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 42; no. 1; pp. 176 - 180
Main Authors Sirotkin, V.V., Yakimov, E.B., Zaitsev, S.I.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.1996
Subjects
Contrast dependence
Defect region parameters reconstruction
Electron beam-induced current
Electron beam-induced current
Contrast dependence
Defect region parameters reconstruction
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Summary:The computer simulation of electron beam-induced current (EBIC) profiles and of EBIC contrast dependence on depletion region width have been carried out. It has been shown that both EBIC profiles and contrast dependence on depletion region width can be used for defect region parameters reconstruction. The optimal ways and limitations of such evaluations have been derived. For one-dimensional defects, the use of contrast dependence on applied voltage is shown to be better for small defect region parameters reconstruction.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(96)01702-3