Growth and characterization of ZnO thin films grown by pulsed laser deposition

ZnO thin films on (0 0 1) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films, the exper...

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Bibliographic Details
Published inApplied surface science Vol. 169; pp. 525 - 528
Main Authors Bae, Sang Hyuck, Lee, Sang Yeol, Jin, Beom Jun, Im, Seongil
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.01.2001
Subjects
Hall measurement
PLD
UV emission
XRD
ZnO
UV emission
PLD
ZnO
XRD
PL
Hall measurement
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Summary:ZnO thin films on (0 0 1) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of 200–700°C. According to XRD, (0 0 2) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly dependent upon the stoichiometry of ZnO films, rather than the crystalline quality.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(00)00752-2