Indium droplet formation during molecular beam epitaxy of InGaN

Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III–V compounds In droplets are found to be formed on the surface of the growing crystal both under metal- and...

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Bibliographic Details
Published inJournal of crystal growth Vol. 206; no. 1; pp. 147 - 149
Main Authors Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.1999
Subjects
Droplet formation
InGaN
MBE
Surface segregation
MBE
Surface segregation
InGaN
Droplet formation
81.15.Hi
64.75.+g
81.05.Ea
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Summary:Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III–V compounds In droplets are found to be formed on the surface of the growing crystal both under metal- and N-rich conditions.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00298-5