Modeling of hydrogen passivation process of silicon for solar cells applications

In this paper, results of investigation of evolution equations' system describing hydrogen passivation of silicon are presented. Using Lie group theory the classification of invariant solutions and initial system reduction to systems of ordinary differential equations (ODEs) is carried out for...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 178; no. 1; pp. 196 - 199
Main Authors Kuznicki, Z.T, Ciach, R, Gorley, P.M, Voznyy, M.V
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2001
Subjects
Diffusion
Dissociation
Evolution equations
Invariant solutions
Passivation
Silicon
Silicon
Evolution equations
Invariant solutions
Dissociation
Diffusion
Passivation
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Summary:In this paper, results of investigation of evolution equations' system describing hydrogen passivation of silicon are presented. Using Lie group theory the classification of invariant solutions and initial system reduction to systems of ordinary differential equations (ODEs) is carried out for admissible infinitesimal operators under constant hydrogen atoms diffusivity in the sample. Possibility of analytical solution of passivation problem is shown. Analysis of system behavior taking into account diffusion and dissociation mechanisms is performed. It is ascertained that free hydrogen atoms diffusion in the sample and `defect-hydrogen' dissociation spoil passivation. Analytical dependences obtained make it possible to predict spatial and time defect distribution under hydrogen passivation of silicon depending on experimental conditions.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(00)00492-4