Features of mass transfer for the laminar melt flow along the interface

• Published in: Journal of crystal growth Vol. 237; pp. 1886 - 1891
• Main Authors: Bykova, S.V., Golyshev, V.D., Gonik, M.A., Tsvetovsky, V.B., Frjazinov, I.V., Marchenko, M.P.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2002
• Subjects: A1. Computer simulation; A1. Convection; A1. Mass transfer; A2. Growth from melt; A2. Microgravity conditions; B2. Semiconducting germanium; A2. Microgravity conditions; B2. Semiconducting germanium; 81.05.Cy; 07.05.Tp; A1. Convection; A2. Growth from melt; A1. Mass transfer; A1. Computer simulation; 81.10.Fq; 81.10.Mx; 61.72.Ss; 61.72.Tt
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)02211-4

The possibility of obtaining the well-known weakly forced melt flow along the melt–crystal interface is studied. It is shown that the well-known laminar-forced melt flow can be provided during crystallization by a method of crystal growth in an axial heat flux close to the phase interface (AHP method). The calculations of the 2D transient problem of crystal growth by the AHP method under microgravity conditions showed that axial microaccelerations with amplitude less than 10 −3 g and a frequency of more than 0.01 Hz will have no influence on this flow.