Chemical bevelling of GaAs-based structures

By using H3PO4/H2O2/H2O etchant bevels through GaAs based structures were prepared. The bevels had angles lower than 5×10−4 rad and good profile linearity. For the bevel surface observation optical interference microscopy was used.

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Bibliographic Details
Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 47; no. 2; pp. 127 - 130
Main Authors Srnanek, R, Novotny, I, Hotovy, I, Gomati, M.El
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.06.1997
Subjects
Chemical bevelling
Gallium arsenide
Optical interference microscopy
Gallium arsenide
Optical interference microscopy
Chemical bevelling
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Summary:By using H3PO4/H2O2/H2O etchant bevels through GaAs based structures were prepared. The bevels had angles lower than 5×10−4 rad and good profile linearity. For the bevel surface observation optical interference microscopy was used.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(97)00024-X