Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons

The electrophysical parameters and surface morphology of n / n – GaAs structures with Schottky contacts before and after exposure to neutrons with an average energy of ~1 MeV are studied. Changes in the electron concentration and mobility profiles in the structures are determined by capacitance–volt...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 55; no. 12; pp. 903 - 906
Main Authors Volkova, E. V., Loginov, A. B., Loginov, B. A., Tarasova, E. A., Puzanov, A. S., Korolev, S. A., Semyonovykh, E. S., Khazanova, S. V., Obolensky, S. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2021
Springer
Springer Nature B.V
Subjects
Atomic force microscopy
Electrical measurement
Fast neutrons
Gallium arsenide
Magnetic Materials
Magnetism
Neutrons
Parameters
Physics
Physics and Astronomy
Radiation
Radiation effects
Schottky contacts
GaAs structure
fast neutrons
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Summary:The electrophysical parameters and surface morphology of n / n – GaAs structures with Schottky contacts before and after exposure to neutrons with an average energy of ~1 MeV are studied. Changes in the electron concentration and mobility profiles in the structures are determined by capacitance–voltage measurements. Using atomic force microscopy, radiation-induced defect clusters are revealed; a comprehensive approach to determining their parameters is proposed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782621100274