Misfortune, challenge, and success: defects in processed semiconductor devices

Process-induced defects are still a key issue in semiconductor device production. The increasing miniaturization and number of process steps as well as the introduction of new materials and processes make the understanding of defect generation more complex. In this paper, we describe small defects i...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 308; pp. 13 - 17
Main Authors Cerva, H., Engelhardt, M., Hierlemann, M., Pölzl, M., Thenikl, T.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2001
Subjects
Device
Dislocation
Stress
Transmission electron microscopy
Transmission electron microscopy
Device
Stress
Dislocation
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Summary:Process-induced defects are still a key issue in semiconductor device production. The increasing miniaturization and number of process steps as well as the introduction of new materials and processes make the understanding of defect generation more complex. In this paper, we describe small defects in silicon, such as dry etching damage, implantation mask defects, and silicidation defects, which may be considered as nuclei for secondary defect formation. In two examples, transmission electron microscopy and stress simulation are applied to study source-drain transistor leakage and dislocation formation at trench corners in silicon.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)00652-4