Island formation during deposition or etching

The behavior of a non-equilibrium lattice-gas model for irreversible formation of two-dimensional islands during submonolayer deposition or etching is examined in detail. In particular, recent developments in describing capture of diffusing species by islands of various sizes are reviewed. Both exac...

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Published inColloids and surfaces. A, Physicochemical and engineering aspects Vol. 165; no. 1; pp. 373 - 403
Main Authors Bartelt, M.C., Hannon, J.B., Schmid, A.K., Stoldt, C.R., Evans, J.W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.05.2000
Subjects
Cobalt
Copper
Epitaxy
Etching
Growth
Low-energy electron microscopy
Low-index single crystal surfaces
Models of non-equilibrium phenomena
Nucleation
Oxygen
Ruthenium
Scanning tunneling microscopy
Silicon
Oxygen
Nucleation
Ruthenium
Models of non-equilibrium phenomena
Growth
Epitaxy
Etching
Cobalt
Low-energy electron microscopy
Scanning tunneling microscopy
Low-index single crystal surfaces
Silicon
Copper
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Summary:The behavior of a non-equilibrium lattice-gas model for irreversible formation of two-dimensional islands during submonolayer deposition or etching is examined in detail. In particular, recent developments in describing capture of diffusing species by islands of various sizes are reviewed. Both exact and geometric descriptions of capture are discussed, elucidating the role of the local environment of the islands, and its dependence on island size, on adatom capture and individual island growth rates. Limitations in mean-field treatments of capture are noted. These results are applied to characterize the growth of Ag islands on Ag(100), Cu/Co islands on Ru(0001), and pits on Si(001) etched with molecular oxygen.
ISSN:0927-7757
1873-4359
DOI:10.1016/S0927-7757(99)00419-7