Depth profiles of palladium–hydrogen complexes in silicon

Wet-chemical etching of palladium doped silicon introduces at least seven new levels in the band gap. The depth profiles of the levels associate them with three different palladium–hydrogen complexes. An analysis of the profiles allows us to correlate the levels to complexes with one, two or three h...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 273-274; pp. 429 - 432
Main Authors Weber, J, Knack, S, Sachse, J.-U
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.1999
Subjects
DLTS
Hydrogen
Silicon
Transition metal
Silicon
Transition metal
Hydrogen
DLTS
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Summary:Wet-chemical etching of palladium doped silicon introduces at least seven new levels in the band gap. The depth profiles of the levels associate them with three different palladium–hydrogen complexes. An analysis of the profiles allows us to correlate the levels to complexes with one, two or three hydrogen atoms. Evidence for a complete electrical passivation of substitutional Pd is presented by a complex which contains at least four hydrogen atoms.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00497-4