Controlled growth of quantum dots on mesa top

For ridge-shaped GaAs mesas grown by selective area epitaxy in the oxide opening of the patterned substrate, the width of the mesa top can be controlled by growing a calculated thickness of the GaAs. InAs can then be selectively grown on the mesa top to obtain well defined rows of self-organized qua...

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Bibliographic Details
Published inJournal of crystal growth Vol. 201; pp. 1209 - 1211
Main Authors Shiralagi, Kumar, Zhang, Ruth, Tsui, Raymond
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1999
Subjects
Quantum dots
Selective growth
SOQD
81.05.D
SOQD
73.61
Selective growth
85.30.V
Quantum dots
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Summary:For ridge-shaped GaAs mesas grown by selective area epitaxy in the oxide opening of the patterned substrate, the width of the mesa top can be controlled by growing a calculated thickness of the GaAs. InAs can then be selectively grown on the mesa top to obtain well defined rows of self-organized quantum dots. The shape of the oxide opening is tailored in this study to achieve the desired dot distributions along the length of a ridge. The results show individual row control of the dots which makes possible the design of novel device structures.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00023-8