Transport and generation-recombination mechanisms of nonequilibrium charge carriers in ZnO/In2O3/InSe:Cd heterojunctions

• Published in: Thin solid films Vol. 519; no. 21; pp. 7356 - 7359
• Main Authors: CUCULESCU, Elmira, EVTODIEV, Igor, CARAMAN, Iuliana, LEONTIE, Liviu, NEDEFF, Vasile, RUSU, Dragoş-Ioan
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 31.08.2011
• Subjects: Charge; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Heterojunctions; Indium oxides; Low energy; Photoconduction and photovoltaic effects; photodielectric effects; Photocurrent; Photoelectric effect; Photosensitivity; Physics; Zinc oxide; Cadmium; Photosensitivity; Charge carriers; Indium selenides; Doping; Native indium oxide; Photocurrents; Indium oxide; AND circuit; III-VI semiconductors; Thin films; III-VI layered semiconductors; Heterojunctions; Zinc oxide; Diffusion coefficient; Photoconductivity; IV characteristic; Transparent material
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2010.12.123

Current-voltage characteristics, spectral characteristics of short-circuit photocurrent and charge generation-recombination kinetics in InSe layer from the contact region of ZnO:Al/In2O3/InSe:Cd heterojunctions are investigated. The structures show photosensitivity in the photon energy range 0.96-3.30eV. The photosensitivity in the low energy range is determined by absorption threshold of InSe:Cd, while in higher energy range, the optical transparency region of ZnO film prevails. For doping levels of 0.5-1.0at.%, the ratio of the ambipolar diffusion coefficient and the recombination rate at the InSe surface is decreasing from 1.8 to 0.9 mu m.