Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 202; pp. 261 - 268
• Main Authors: Insepov, Z., Allen, L.P., Santeufemio, C., Jones, K.S., Yamada, I.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2003
• Subjects: AFM; Cluster; Crater; Faceting; Implantation; Molecular dynamics; TEM; 02.70.Ns; Crater; Molecular dynamics; AFM; Cluster; Implantation; 34.50.Dy; 61.43.Bn; TEM; 61.72.Ff; Faceting

A hybrid molecular dynamics model has been applied for modeling impacts of Ar and decaborane clusters, with energies ranging from 25 to 1500 eV/atom, impacting Si surfaces. Crater formation, sputtering, and the shapes of craters and rims were studied. Our simulation predicts that on a Si(1 0 0), cra...