Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts
A hybrid molecular dynamics model has been applied for modeling impacts of Ar and decaborane clusters, with energies ranging from 25 to 1500 eV/atom, impacting Si surfaces. Crater formation, sputtering, and the shapes of craters and rims were studied. Our simulation predicts that on a Si(1 0 0), cra...
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Published in | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 202; pp. 261 - 268 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.04.2003
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Subjects | |
Online Access | Get full text |
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Summary: | A hybrid molecular dynamics model has been applied for modeling impacts of Ar and decaborane clusters, with energies ranging from 25 to 1500 eV/atom, impacting Si surfaces. Crater formation, sputtering, and the shapes of craters and rims were studied. Our simulation predicts that on a Si(1
0
0), craters are nearly triangular in cross-section, with the facets directed along the close-packed (1
1
1) planes. The Si(1
0
0) craters exhibit four fold symmetry. The craters on Si(1
1
1) surface are well rounded in cross-section and the top-view shows a complicated six fold or triangular image. The simulation results for individual gas cluster impacts were compared with experiments at low dose (10
10 ions/cm
2 charge fluence) for Ar impacts into Si(1
0
0) and Si(1
1
1) substrate surfaces. Atomic force microscopy and cross-sectional high-resolution transmission electron microscope imaging of individual gas cluster ion impacts into Si(1
0
0) and Si(1
1
1) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction. The sputtering yield from Si(1
0
0) surfaces bombarded with B
10 cluster ions, with total energy of 1–15 keV, was also calculated. The results of this study will be helpful for the research and development of a new low-damage gas cluster ion beam process technology. |
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ISSN: | 0168-583X 1872-9584 |
DOI: | 10.1016/S0168-583X(02)01867-0 |