Electronic levels in MEH-PPV

pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conductio...

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Published inSynthetic metals Vol. 111; pp. 535 - 537
Main Authors Stallinga, P, Gomes, H.L, Rost, H, Holmes, A.B, Harrison, M.G, Friend, R.H
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2000
Subjects
DLTS
MEH-PPV
Polymers
Traps
Traps
MEH-PPV
Polymers
DLTS
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Abstract pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states.
AbstractList pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states.
Author Friend, R.H
Harrison, M.G
Stallinga, P
Rost, H
Holmes, A.B
Gomes, H.L
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Cites_doi 10.1103/PhysRevB.55.9590
10.1063/1.1663719
10.1063/1.321583
10.1103/PhysRevB.32.6571
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MEH-PPV
Polymers
DLTS
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Blood (10.1016/S0379-6779(99)00413-0_BIB3) 1992
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SubjectTerms DLTS
MEH-PPV
Polymers
Traps
Title Electronic levels in MEH-PPV
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