Electronic levels in MEH-PPV

pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conductio...

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Bibliographic Details
Published inSynthetic metals Vol. 111; pp. 535 - 537
Main Authors Stallinga, P, Gomes, H.L, Rost, H, Holmes, A.B, Harrison, M.G, Friend, R.H
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2000
Subjects
DLTS
MEH-PPV
Polymers
Traps
Traps
MEH-PPV
Polymers
DLTS
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Summary:pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states.
ISSN:0379-6779
1879-3290
DOI:10.1016/S0379-6779(99)00413-0