Measurements of far-infrared intersubband absorption linewidths in GaAs/AlGaAs quantum wells as a function of temperature and charge density

Intersubband transitions in doped quantum wells are of fundamental scientific interest, as well as technological interest for potential devices. One of the important characteristics of the transitions is their linewidth. We present the results of linear absorption spectroscopy on a coupled double as...

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Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 2; no. 1; pp. 177 - 180
Main Authors Williams, J.B, Craig, K, Sherwin, M.S, Campman, K, Gossard, A.C
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.07.1998
Subjects
Intersubband transitions
Quantum wells
Intersubband transitions
Quantum wells
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Summary:Intersubband transitions in doped quantum wells are of fundamental scientific interest, as well as technological interest for potential devices. One of the important characteristics of the transitions is their linewidth. We present the results of linear absorption spectroscopy on a coupled double asymmetric QW structure. Using a backgated sample, we can independently vary the charge density and DC field at the well. The absorption lines appear to be homogeneously broadened. The lines appear to become lifetime broadened for temperatures above 70 K.
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(98)00038-1