Optimization of layer structure for InGaAs channel pseudomorphic HEMTs

Electron scattering in the pseudomorphic InGaAs channel of an InGaAs–AlGaAs heterostructure grown by molecular beam epitaxy has been studied at low temperatures to optimize the layer structure for use at 300 K in high-frequency transistors (p-HEMTs).

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Bibliographic Details
Published inJournal of crystal growth Vol. 201; pp. 757 - 760
Main Authors Pearson, J.L, Holland, M.C, Stanley, C.R, Long, A.R, Skuras, E, Asenov, A, Davies, J.H
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1999
Subjects
InGaAs
Molecular beam epitaxy
Pseudomorphic HEMT
Transport measurements
InGaAs
Molecular beam epitaxy
Pseudomorphic HEMT
Transport measurements
68.55.Bd
72.80.Ey
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Summary:Electron scattering in the pseudomorphic InGaAs channel of an InGaAs–AlGaAs heterostructure grown by molecular beam epitaxy has been studied at low temperatures to optimize the layer structure for use at 300 K in high-frequency transistors (p-HEMTs).
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01462-6