Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen
We report the properties of p-n junctions produced in ZnO films by As super(+) ion implantation followed by annealing in atomic oxygen. The starting films, n-ZnO , were grown by magnetron sputtering on amorphous SiO sub(2) substrates. As shown by x-ray diffraction, the c axis of ZnO is perpendicular...
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Published in | Inorganic materials Vol. 43; no. 7; pp. 714 - 719 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.07.2007
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Online Access | Get full text |
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Summary: | We report the properties of p-n junctions produced in ZnO films by As super(+) ion implantation followed by annealing in atomic oxygen. The starting films, n-ZnO , were grown by magnetron sputtering on amorphous SiO sub(2) substrates. As shown by x-ray diffraction, the c axis of ZnO is perpendicular to the film surface. The resistivity of the p-ZnO layer is 30-35 Omega cm, carrier mobility 1-2.5 cm super(2)/(V s), and hole concentration 3 x 10 super(18) cm super(-3). The arsenic and gallium concentrations are 2.5 x 10 super(19) and 1 x 10 super(18) cm super(-3), respectively. The arsenic profile is Gaussian in shape, as shown by secondary ion mass spectrometry. Current-voltage data attest to the presence of an i-layer and to recombination in the space charge region. The barrier height evaluated from current-voltage and capacitance-voltage data is about 3.4 eV, which is comparable to the band gap of ZnO. The electro-and photoluminescence spectra of the junctions show bands at 440 and 510 nm. The 510-nm emission is typical of as-grown n-ZnO films. The 440-nm band is attributable to donor-acceptor recombination. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168507070084 |