Properties of palladium silicide thin films obtained by vacuum rapid thermal annealing of r.f. sputtered Pd films on Si

• Published in: Vacuum Vol. 51; no. 2; pp. 177 - 180
• Main Authors: Beshkov, G, Dimitrov, DB, Koprinarova, J, Gesheva, K
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.1998
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/S0042-207X(98)00154-7

The possibility of obtaining palladium silicide layers by rapid thermal annealing (RTA) has been studied. Palladium layers of 300 and 1000 Å thicknesses were deposited by r.f. sputtering on Si substrates. The samples were subjected to RTA at 800, 1000, 1200 and 1400°C for 15 s, 30 s, 1 min and 3 min in vacuum 5×10 −5 Torr. The deposited structure was studied by RHEED. The dependence of the structure and the sheet resistance of the Pd–Si films, as a function of the RTA condition, was established. The sample temperature in the RTA system could be increased from room temperature to the working temperature (800–1400°C) in 2 s. Pd 2Si was formed after annealing at 1400°C even for short times of 15 s.