High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers

Strain-compensated 1.3 μm AlGaInAs/InP multiquantum well (MQW) lasers with various doping concentrations in the p-AlInAs cladding layer are systematically studied. The lasers with higher doping exhibit lower series resistance, higher maximum output power, and better temperature characteristics, i.e....

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Bibliographic Details
Published inJournal of crystal growth Vol. 201; pp. 923 - 926
Main Authors Pan, Jen-Wei, Chen, Ming-Hong, Chyi, Jen-Inn
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1999
Subjects
Characteristic temperature
Leakage current
Quantum well laser
Characteristic temperature
68.55.B
Leakage current
42.55.P
Quantum well laser
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Summary:Strain-compensated 1.3 μm AlGaInAs/InP multiquantum well (MQW) lasers with various doping concentrations in the p-AlInAs cladding layer are systematically studied. The lasers with higher doping exhibit lower series resistance, higher maximum output power, and better temperature characteristics, i.e. characteristic temperature as high as 90 K and degradation in slope efficiency as low as −0.66 dB, in the temperature range of 25°C–70°C. This is attributed to the significant reduction of electron leakage over the p-cladding layer.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01490-0