Simulation of CdZnTe gamma-ray spectrometer response

A model of a semiconductor gamma-ray planar detector is presented. The model takes into account the physical phenomena involved in the detection process, namely the gamma-ray's interaction with the crystal, the physics of the semiconductor's charge collection and the electric field distrib...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 442; no. 1-3; pp. 250 - 254
Main Authors Glière, A., Rosaz, M., Verger, L.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 11.03.2000
Subjects
CdZnTe
Gamma-ray spectrometry
Modeling
Semiconductor radiation detector
07.85.Yk
85.30.De
81.05.Dz
CdZnTe
Gamma-ray spectrometry
Modeling
Semiconductor radiation detector
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Summary:A model of a semiconductor gamma-ray planar detector is presented. The model takes into account the physical phenomena involved in the detection process, namely the gamma-ray's interaction with the crystal, the physics of the semiconductor's charge collection and the electric field distribution. Its outputs are conventional pulse-height spectra and biparametric (rise time versus pulse height) spectra. Some of the model's capabilities are demonstrated by comparison with spectra obtained for CdZnTe detectors. The comparison between simulated and experimental pulse-height spectra shows a good agreement when the measured electric field profile is used in the simulation. (Electric field is measured via the Pockels effect). A better modeling of the electronics will improve the current quantitative agreement between model and experiment for biparametric spectra.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(99)01229-2