Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation

At low temperature, ZnSe emits strongly the near-band-edge luminescence consisting of the excitonic emissions and defect-related ones. However, it was observed that these emission lines are strongly fatigued under ultraviolet irradiation. Based on various experiments, we propose a mechanism of photo...

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Bibliographic Details
Published inJournal of crystal growth Vol. 214; pp. 441 - 446
Main Authors Liem, Nguyen Quang, Lee, Joo In, Quang, Vu Xuan, Thanh, Do Xuan, Kim, Dongho, Son, Jeong-Sik, Noh, Sam Kyu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2000
Subjects
Photo-generated carriers
Photo-induced traps
Photoluminescence fatigue
Photoluminescence spectra
UV irradiation
ZnSe
78.55.Et
78.66.Hf
Photoluminescence spectra
Photo-generated carriers
78.55.−m
UV irradiation
ZnSe
Photoluminescence fatigue
Photo-induced traps
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Summary:At low temperature, ZnSe emits strongly the near-band-edge luminescence consisting of the excitonic emissions and defect-related ones. However, it was observed that these emission lines are strongly fatigued under ultraviolet irradiation. Based on various experiments, we propose a mechanism of photo-induced traps to explain the photoluminescence fatigue phenomenon. These traps are created or enhanced in ZnSe by irradiation of the ultraviolet light with photon energy much above the band gap energy of cubic ZnSe.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00126-3