High Fe solubility in InP by high temperature ion implantation

High temperature (>200°C) Fe implantation in InP has been proved to be a suitable method to obtain high substitutional Fe concentrations ([ Fe 2+]>10 18 cm −3) , without substantial defect generation and Fe precipitation. Electrical (current–voltage), deep level (photo-induced current transien...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 178; no. 1; pp. 275 - 278
Main Authors Fraboni, B, Gasparotto, A, Cesca, T, Priolo, F, Scamarcio, G, Mazzone, A, Troccoli, M
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2001
Subjects
Fe solubility
Ion implantation
Semi-insulating InP
Fe solubility
Semi-insulating InP
Ion implantation
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Summary:High temperature (>200°C) Fe implantation in InP has been proved to be a suitable method to obtain high substitutional Fe concentrations ([ Fe 2+]>10 18 cm −3) , without substantial defect generation and Fe precipitation. Electrical (current–voltage), deep level (photo-induced current transient spectroscopy) and optical (photoluminescence) measurements have been used to assess the behaviour of the activated Fe fraction, which is compared with the total Fe concentration evaluated by secondary ion mass spectrometry. Our results show no detrimental effects on the electrical (and optical) Fe related properties for Fe peak concentrations as high as 2×10 19 cm −3 , in spite of a large inactive Fe fraction. A strong correlation between Fe activation and background n-doping concentration has been put in evidence.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(00)00477-8