Carrier capture time in T-shaped semiconductor quantum wires

We investigate the capture time from quasi-two-dimensional (2D) electrons to quasi-one-dimensional electrons (1D) in T-shaped semiconductor quantum wires. Two processes are considered: longitudinal-optical-(LO)-phonon emission and quasi-elastic acoustical-phonon scattering. The quasi-1D ground state...

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Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 2; no. 1; pp. 983 - 986
Main Authors Narvaez, Gustavo A., Aguiar, Maria Carolina de O., Brum, José A
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.07.1998
Subjects
Heterostructures
Quantum wires
Relaxation
Quantum wires
Relaxation
Heterostructures
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Summary:We investigate the capture time from quasi-two-dimensional (2D) electrons to quasi-one-dimensional electrons (1D) in T-shaped semiconductor quantum wires. Two processes are considered: longitudinal-optical-(LO)-phonon emission and quasi-elastic acoustical-phonon scattering. The quasi-1D ground state is a shallow bound state and is separated by less than one LO-phonon from the quasi-2D continuum. This enhances the LO-phonon emission process which largely dominates the capture process. The effects of the modulation of the density probability of the quasi-2D continuum lead only to a weak dependence of the capture time on the structure parameters.
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(98)00202-1