Influence of proton irradiation on recombination current in 6H–SiC pn structures

The effect of proton bombardment on recombination current and the value of the steady state lifetime of nonequilibrium carriers for 6H–SiC pn structures created by sublimation epitaxy was investigated. The irradiation was carried out with 8-MeV protons in the range of doses from 10 14–10 16 cm −2. I...

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Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 61; pp. 441 - 445
Main Authors Strel'chuk, A.M, Kozlovski, V.V, Savkina, N.S, Rastegaeva, M.G, Andreev, A.N
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.07.1999
Subjects
6H–SiC pn structures
Lifetimes
Proton irradiation
Recombination current
Recombination current
6H–SiC pn structures
Proton irradiation
Lifetimes
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Summary:The effect of proton bombardment on recombination current and the value of the steady state lifetime of nonequilibrium carriers for 6H–SiC pn structures created by sublimation epitaxy was investigated. The irradiation was carried out with 8-MeV protons in the range of doses from 10 14–10 16 cm −2. Irradiation with a dose of 3.6×10 14 cm −2 increases the recombination current and decreases the steady-state lifetime for deep-level recombination in the space charge region by up to two orders of magnitude. Irradiation with higher doses (up to 5×10 15 cm −2) or annealing at temperatures in the range 300–800 K leaves the recombination current and steady state lifetime practically unchanged.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(98)00551-0