Influence of defects in low-energy nitrogen ion beam assisted gallium nitride thin film deposition

Epitaxial GaN thin films were grown by low-energy nitrogen ion beam assisted deposition of gallium on c-plane sapphire. By applying X-ray diffraction and transmission electron microscopy, the influence of the ion irradiation induced defects on the formation of the undesired cubic GaN polytype in the...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 308; pp. 81 - 84
Main Authors Gerlach, J.W., Sienz, S., Attenberger, W., Rauschenbach, B.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2001
Subjects
GaN polytypes
Ion beam assisted deposition
Ion beam induced defects
XRD pole figures
XRD pole figures
Ion beam induced defects
GaN polytypes
Ion beam assisted deposition
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Summary:Epitaxial GaN thin films were grown by low-energy nitrogen ion beam assisted deposition of gallium on c-plane sapphire. By applying X-ray diffraction and transmission electron microscopy, the influence of the ion irradiation induced defects on the formation of the undesired cubic GaN polytype in the hexagonal films is investigated. The results show that in all films containing the cubic polytype it appears in twinned form. An increase of the ion energy as well as the ratio of nitrogen ion flux and gallium atom flux ( I/ A-ratio) leads to an increase in the amount of cubic polytype in the films. The observations are discussed considering the ion beam induced defect creation.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)00661-5