Miniband transport in vertical superlattice field effect transistors

The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with...

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Bibliographic Details
Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 12; no. 1; pp. 281 - 284
Main Authors Deutschmann, R.A, Wegscheider, W, Rother, M, Bichler, M, Abstreiter, G
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2002
Subjects
Field effect transistor
Lateral superlattice
Negative differential resistance
Field effect transistor
Lateral superlattice
73.21.Cd
73.63.Hs
Negative differential resistance
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Summary:The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki–Tsu transport model. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Additional features in the source–drain current are attributed to Bloch-phonon resonances.
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(01)00373-3