Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 54; no. 9; pp. 1150 - 1154
• Main Authors: Chumakov, N. K., Chernykh, I. A., Davydov, A. B., Ezubchenko, I. S., Grishchenko, Yu. V., Lev, L. L., Maiboroda, I. O., Morgun, L. A., Strocov, V. N., Valeyev, V. G., Zanaveskin, M. L.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.09.2020; Springer; Springer Nature B.V
• Subjects: 2020; Aluminum gallium nitrides; Analysis; Coherence; Electron gas; Electrons; Gallium nitrides; Heterostructures; High electron mobility transistors; Kondo effect; Low temperature; Magnetic fields; Magnetic Materials; Magnetism; March 10–13; Nizhny Novgorod; Physics; Physics and Astronomy; Quantum phenomena; Spin-orbit interactions; Temperature dependence; Xxiv International Symposium “Nanophysics and Nanoelectronics”; magnetism; nitride heterostructures; Kondo effect; spin-orbit interaction; two-dimensional electron gas (2DEG)
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782620090067

The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The temperature-dependent zero-field resistivity data exhibits an upturn below 120 K, while the standard low-temperature weak localization and then weak antilocalization behaviour is revealed at T → 0. Magnetic transport investigations of the system are performed in the temperature range of 0.1–300 K and at magnetic fields up to 8 T, applied perpendicularly to the 2DEG plane. The experimental data are analyzed in terms of the multichannel Kondo model for d 0 magnetic materials and weak localization theory taking into account the spin-orbit interaction.