Redistribution of Er implanted into Si(1 0 0): Correlation with implantation induced damage

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 212; pp. 477 - 482
• Main Authors: Chini, T.K, Datta, D.P, Satpati, B, Tanemura, M, Okuyama, F
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2003
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(03)01499-X

The redistribution of Er in Si is studied by annealing samples of Si implanted with 200 keV Er at doses 5 × 10 14 and 3.2 × 10 15 ions/cm 2, respectively. Er profiles are measured by secondary ion mass spectrometry and implantation induced damage by cross-sectional transmission electron microscopy. A continuous amorphous layer is formed extending from surface to the end of range for the as-implanted high dose sample which recrystallizes by solid phase epitaxial process with substantial [1 1 1] twins and {1 1 1} stacking faults near the surface region after annealing at 900 °C for 30 min. The high dose sample after annealing is characterised by Er trapping of maximum concentration of 8 × 10 19/cm 3 at the heavily twinned recrystallized region with a decreased concentration at the surface. On the other hand the low dose sample after annealing shows Er segregation of concentrations up to 3 × 10 20/cm 3 at the surface.