Ab initio energy calculation of nitrogen-related defects in ZnSe

We present results of optical degradation experiments on II–VI laser diodes. The illumination is done with a microfocus to allow the degradation of stacking-fault-free regions. A degradation is only observed if the excited region (in our case the waveguide) is doped with nitrogen. Parallel to the de...

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Bibliographic Details
Published inJournal of crystal growth Vol. 214; pp. 474 - 477
Main Authors Gundel, S, Albert, D, Nürnberger, J, Faschinger, W
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2000
Subjects
Degradation
Density functionals theory
II–VI laser
Degradation
71.55.Gs
II–VI laser
Density functionals theory
72.80.Ey
73.60.Cs
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Summary:We present results of optical degradation experiments on II–VI laser diodes. The illumination is done with a microfocus to allow the degradation of stacking-fault-free regions. A degradation is only observed if the excited region (in our case the waveguide) is doped with nitrogen. Parallel to the decrease of the quantum-well luminescence, we observe the increase of a deep luminescence signal from the waveguide region. Under reverse bias the degradation rate is decreased. Based on density functional calculations, this behaviour can be explained by a deplacement of the nitrogen from the substitutional to the interstitial site. The resulting complex of a selenium vacancy and the nitrogen interstitial is considerably more stable than the nitrogen acceptor.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00133-0