Determination of Silicon Carbide Structures Layer Thicknesses using Reflection Spectra Frequency Analysis

The paper introduces a method of determining thicknesses of single- and multi-layer silicon carbide structures using infrared reflection spectrum frequency analysis. Spectrum waveform is affected by spectral interference in layers or groups of layers. LabView software package offered a solution to p...

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Bibliographic Details
Published inTechnical physics Vol. 66; no. 6; pp. 779 - 783
Main Authors Panov, M. F., Pavlova, M. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.06.2021
Springer
Springer Nature B.V
Subjects
Analysis
Classical and Continuum Physics
Current carriers
Electric fields
Electrical conductivity
Frequency analysis
Infrared analysis
Infrared reflection
Lattice vibration
Multilayers
Physics
Physics and Astronomy
Power electronics
Silicon
Silicon carbide
Spectrum analysis
Thickness
Waveforms
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Summary:The paper introduces a method of determining thicknesses of single- and multi-layer silicon carbide structures using infrared reflection spectrum frequency analysis. Spectrum waveform is affected by spectral interference in layers or groups of layers. LabView software package offered a solution to perform spectral analysis. The results are provided both for model structures and experimental spectra. Model structure’ reflection spectrum was evaluated using a dielectric function that took into account the response of lattice vibrations and free charge carriers. Experimental spectra were obtained from a real multilayer structure manufactured for power electronics devices.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784221050182