Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed.The electric field applied was found to be the extrinsic cause for the device instability,while the traps were recognized as the main intrinsic factor.The ef...

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Published inJournal of semiconductors Vol. 33; no. 5; pp. 53 - 56
Main Author 房玉龙 敦少博 刘波 尹甲运 蔡树军 冯志红
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
AlGaN
Degradation
Devices
Electric fields
Gallium nitrides
High electron mobility transistors
Semiconductor devices
Semiconductors
Volt-ampere characteristics
原因
可降解
器件退化
电场诱导
电应力
电气
高电子迁移率晶体管
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Summary:Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed.The electric field applied was found to be the extrinsic cause for the device instability,while the traps were recognized as the main intrinsic factor.The effect of the traps on the device degradation was identified by recovery experiments and pulsed I-V measurements.The total degradation of the devices consists of two parts：recoverable degradation and unrecoverable degradation.The electric field induced traps combined with the inherent ones in the device bulk are mainly responsible for the recoverable degradation.
Bibliography:11-5781/TN
AlGaN/GaN HEMTs electrical degradation traps inverse piezoelectric effect
Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed.The electric field applied was found to be the extrinsic cause for the device instability,while the traps were recognized as the main intrinsic factor.The effect of the traps on the device degradation was identified by recovery experiments and pulsed I-V measurements.The total degradation of the devices consists of two parts：recoverable degradation and unrecoverable degradation.The electric field induced traps combined with the inherent ones in the device bulk are mainly responsible for the recoverable degradation.
Fang Yulong, Dun Shaobo, Liu Bo, Yin Jiayun, Cai Shujun, and Feng Zhihong（Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China）
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/33/5/054005