Boron in mesoporous Si — Where have all the carriers gone?

Highly-doped p-type Si is electrochemically etched in an HF-based electrolyte to produce mesoporous surface layers. Using both elastic-recoil detection analysis and secondary ion mass spectroscopy it is concluded that B atoms are not removed from the porous layer. Crystallite size for the most porou...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 273-274; pp. 951 - 954
Main Authors Polisski, G, Kovalev, D, Dollinger, G, Sulima, T, Koch, F
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.1999
Subjects
Impurity concentration
Nanocrystals
Porous silicon
Porous silicon
Impurity concentration
Nanocrystals
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Summary:Highly-doped p-type Si is electrochemically etched in an HF-based electrolyte to produce mesoporous surface layers. Using both elastic-recoil detection analysis and secondary ion mass spectroscopy it is concluded that B atoms are not removed from the porous layer. Crystallite size for the most porous samples is related to the average dopant spacing. It is argued that the electrolytic erosion of Si stops when B is in the surface layer and passivated.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00562-1