Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures

The photosensitivity, photoluminescence, and electroluminescence spectra of InGaAs/GaAs diode nanoheterostructures with a Si δ layer formed at a distance of 10 nm from the InGaAs quantum well are studied. The influence of the arrangement of the δ layer with respect to the quantum well on the optoele...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 49; no. 2; pp. 139 - 142
Main Authors Volkova, N. S., Gorshkov, A. P., Tikhov, S. V., Baidus, N. V., Khazanova, S. V., Degtyarev, V. E., Filatov, D. O.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.02.2015
Springer
Subjects
2014
Analysis
ELECTROLUMINESCENCE
EMISSION SPECTRA
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LAYERS
Magnetic Materials
Magnetism
March 10–14
MATERIALS SCIENCE
NANOSCIENCE AND NANOTECHNOLOGY
Nizhni Novgorod
Optoelectronics industry
PHOTOLUMINESCENCE
PHOTOSENSITIVITY
Physics
Physics and Astronomy
QUANTUM WELLS
SILICON
XVIII Symposium “Nanophysics and Nanoelectronics”
Heavy Hole
Stark Shift
Schottky Diode
GaAs
Quantum Well
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Summary:The photosensitivity, photoluminescence, and electroluminescence spectra of InGaAs/GaAs diode nanoheterostructures with a Si δ layer formed at a distance of 10 nm from the InGaAs quantum well are studied. The influence of the arrangement of the δ layer with respect to the quantum well on the optoelectronic properties of the structures is established.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615020232