Growth and characterisation of GaN epitaxial layers

Layers of monocrystalline GaN were grown at different temperatures by atmospheric pressure metalorganic chemical vapour deposition (MOCVD) method on the sapphire substrates. The high quality of the layers was confirmed by X-ray diffraction and photoluminescence spectra measurements. For comparison p...

Full description

Saved in:
Bibliographic Details
Published inVacuum Vol. 50; no. 1; pp. 211 - 214
Main Authors Paszkiewicz, R, Korbutowicz, R, Radziewicz, D, Panek, M, Paszkiewicz, B, Kozlowski, J, Boratynski, B, Tlaczala, M, Novikov, SV
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.05.1998
Online AccessGet full text

Cover

More Information
Summary:Layers of monocrystalline GaN were grown at different temperatures by atmospheric pressure metalorganic chemical vapour deposition (MOCVD) method on the sapphire substrates. The high quality of the layers was confirmed by X-ray diffraction and photoluminescence spectra measurements. For comparison purposes, simultaneous growth on a-plane and c-plane sapphire substrates was performed for each of the experiments. The GaN layers grown on either a-plane or c-plane sapphire were oriented with the GaN c-plane (0001) parallel to the substrate. The 325 nm line of He-Cd laser was used as an excitation source for photoluminescence experiments. Photoluminescence spectra showed near band peaks and broad yellow band emission at 77 K.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(98)00044-X