Single-common-gate triple-dot single-electron devices with side gate capacitances larger than the central one

Single-common-gate triple-dot single-electron devices that have homogeneous junction capacitances Cj and inhomogeneous but symmetrical gate capacitances have been studied. The turnstile operation is possible even if the side gate capacitance Cgs is larger than the central gate capacitance Cgc, altho...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 53; no. 9; pp. 94002 - 1-094002-9
Main Authors Imai, Shigeru, Moriguchi, Shin-ichi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.09.2014
Subjects
Capacitance
Devices
Electric potential
Gates
Integers
Stability
Swing
Unit cell
Voltage
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Summary:Single-common-gate triple-dot single-electron devices that have homogeneous junction capacitances Cj and inhomogeneous but symmetrical gate capacitances have been studied. The turnstile operation is possible even if the side gate capacitance Cgs is larger than the central gate capacitance Cgc, although such structures are far from that of the conventional turnstile device with Cgs equal to zero. This is because an overlap between neighboring stability regions always exists for any Cgs/Cgc ratio, where a gate voltage (Vg) swing causes the turnstile operation. In particular, if Cgs/Cgc ratio is an integer, the stability diagrams have the periodic structure along the Vg axis and the overlap appears at the center of the periodic "unit cell". The existence of the overlap is proved also for any noninteger Cgs/Cgc ratio. The case of Cgs less than Cgc is also investigated. If Cgs/Cgc decreases, the stability diagram approaches that for the conventional turnstile device.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.094002