A new low voltage fast SONOS memory with high- k dielectric

The comparison of simulated write/erase characteristics of silicon–oxide–nitride–oxide–silicon (SONOS) nonvolatile memory with different oxides SiO 2, Al 2O 3 and ZrO 2 as a top dielectric was made. We demonstrate, that an application of high- k dielectrics allows to decrease the write/erase program...

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Bibliographic Details
Published inSolid-state electronics Vol. 47; no. 10; pp. 1651 - 1656
Main Authors Gritsenko, V.A., Nasyrov, K.A., Novikov, Yu.N., Aseev, A.L., Yoon, S.Y., Lee, Jo-Won, Lee, E.-H., Kim, C.W.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.10.2003
Subjects
EEPROM
FLASH
High- k dielectrics
Silicon nitride
SONOS
SONOS
EEPROM
FLASH
Silicon nitride
High- k dielectrics
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Summary:The comparison of simulated write/erase characteristics of silicon–oxide–nitride–oxide–silicon (SONOS) nonvolatile memory with different oxides SiO 2, Al 2O 3 and ZrO 2 as a top dielectric was made. We demonstrate, that an application of high- k dielectrics allows to decrease the write/erase programming voltage amplitude or programming time from 1 ms to 10 μs. The ZrO 2 suppresses parasitic electron injection from polysilicon gate. Also the design of SONOS memory based on high- k dielectrics is promising for terabit scale using hot carriers injection EEPROM and DRAM memory.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(03)00174-6